The effect of interfacial layer properties on the performance of Hf-based gate stack devices

By Gennadi Bersuker, Chanro Park, J. Barnett, P. Lysaght, P. Kirsch, C. Young, R. Choi, B. Lee, B. Foran, K. Benthem and 3 more. 2006

149 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/5fbb9f5fcadb02eaaf1b56377c4e00a2d775a61d

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In Electrical and Electronic Engineering

1. Gennadi Bersuker
2. Luca Larcher
3. Luca Vandelli
4. Andrea Padovani
5. Daniele Ielmini

Citations in the corpus

• A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks (2011, background): “6) compared to the bulk stoichiometric SiO2 due to the high density of oxygen vacancies near the HfO2 interface, induced by the oxygen out diffusion to the high-k dielectric [34].”