Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries
By Mario Lanza, Gennadi Bersuker, M. Porti, Enrique Miranda, M. Nafría, X. Aymerich. 2012
172 citations recorded by the source corpus.
Overcoming challenges associated with implementation of resistive random access memory technology for non-volatile information storage requires identifying the material characteristics responsible for resistive switching. In order to connect the switching phenomenon to the nano-scale morphological features of the dielectrics employed in memory cells, we applied the enhanced conductive atomic force microscopy technique for in situ analysis of the simultaneously collected electrical and topographical data on HfO2 stacks of various degrees of crystallinity. We demonstrate that the resistive switching is a local phenomenon associated with the formation of a conductive filament with a sufficiently small cross-section, which is determined by the maximum passing current. Switchable filament is found to be formed at the dielectric sites where the forming voltages were sufficiently small, which, in the case of the stoichiometric HfO2, is observed exclusively at the grain boundary regions representing low resistant...
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/dc0de03361be1f79a96564fad3bf4b02b3ba3b78
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In Electrical and Electronic Engineering
Citations in the corpus
- Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching (2015, background): “Since the transport of electrons can effectively proceed via the oxygen vacancies, the GBs represent the preferential paths for the electron transfer through the dielectric [16], [19], [20].”