Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching

By Andrea Padovani, Luca Larcher, O. Pirrotta, Luca Vandelli, Gennadi Bersuker. IEEE Transactions on Electron Devices, 2015

167 citations recorded by the source corpus.

We propose a model describing the operations of hafnium oxide-based resistive random access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport are self-consistently described starting from the leakage current in pristine HfO2. Material structural modifications occurring during the RRAM operations, such as conductive filament (CF) creation and disruption, are accounted for. The model describes the complex processes leading to a formation of the CF and its dependence on both electrical conditions (e.g., current compliance, voltage stress, and temperature) and device characteristics (e.g., electrodes material and dielectric thickness).

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/cfa67d8caa54a23e1e0e4f84116ec1c11e99f40d

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In Electrical and Electronic Engineering

1. Daniele Ielmini
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Citations in the corpus

• Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, methodology): “The results in figure 10 support the capability of KMC models for calculating I–”