Metal oxide RRAM switching mechanism based on conductive filament microscopic properties
By Gennadi Bersuker, David Gilmer, D. Veksler, J. Yum, Hokyung Park, S. Lian, Luca Vandelli, Andrea Padovani, L. Larcher, Keith P. McKenna and 7 more. International Electron Devices Meeting, 2010
134 citations recorded by the source corpus.
By combining electrical, physical, and transport/atomistic modeling results, this study identifies critical conductive filament features controlling TiN/HfO2/TiN resistive memory operations. The forming process is found to define the filament geometry, which in turn determines the temperature profile and, consequently, the switching characteristics. The findings point to the critical importance of controlling filament dimensions during the forming process (polarity, max current/voltage, etc.).
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/92690f8c8c6ebcc6b008ea7aee5b5937314cc6da
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In Electrical and Electronic Engineering
- Shimeng Yu
- Daniele Ielmini
- H. Philip Wong
- Ximeng Guan
- Gennadi Bersuker
- Luca Larcher
- Luca Vandelli
- Andrea Padovani
In Materials Chemistry
Citations in the corpus
- A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks (2011, background): “This transport component, in particular, in the case of paths formed through the grain boundaries in the polycrystalline HfO2 films, may dominate the current [18].”
- On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology (2012, methodology): “The simulation framework includes both a deterministic TAT solver for the electron transport and a stochastic description of the Vo dynamics during the switching processes.”