Negative oxygen vacancies in HfO2 as charge traps in high-k stacks
By J. Gavartin, D. M. Ramo, Alexander L. Shluger, Gennadi Bersuker, B. Lee. 2006
316 citations recorded by the source corpus.
The optical excitation and thermal ionization energies of oxygen vacancies in m-HfO2 are calculated using a non-local density functional theory with atomic basis sets and periodic supercell. The thermal ionization energies of negatively charged V- and V2- centers are consistent with values obtained by the electrical measurements. The results suggest that negative oxygen vacancies are essentially polaronic in origin. They are likely candidates for intrinsic shallow electron traps in the hafnium based gate stack devices. (c) 2006 American Institute of Physics.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/638323158bc358b78ca518f197427a6904453210
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In Electrical and Electronic Engineering
Citations in the corpus
- Trapping, self-trapping and the polaron family (2007, methodology): “What has become clear only recently is that so-called shallow electron trapping by the oxygen vacancy has a strong polaronic character (Gavartin et al 2006a, 2006b).”
- Electronic properties of hafnium oxide: A contribution from defects and traps (2016, unknown): “[41]; (c) for three- and four-coordinated oxygen vacancy from Ref.”
- Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks (2007, background): “plicable to the studied thermally activated electron transitions, which involve significant lattice relaxation [16], [17]; modeling of the measurements involving temperature-activated processes”