Tahir Ghani

Atomic and Molecular Physics, and Optics · 2000–2014

A researcher in the Science corpus: 12 papers; trusts 1 researcher and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Tahir Ghani trusts

Their strongest outbound trust, strongest first, inferred from their citations.

  1. J. Miltat (in Atomic and Molecular Physics, and Optics)

Papers from Tahir Ghani's perspective

Ordered by how strongly the researchers Tahir Ghani trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
  2. Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design (International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138))
  3. Cramming More Components Onto Integrated Circuits
  4. A logic nanotechnology featuring strained-silicon (IEEE Electron Device Letters)
  5. Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs (2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303))
  6. Strained Si NMOSFETs for high performance CMOS technology (2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184))
  7. A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors (IEEE International Electron Devices Meeting 2003)
  8. Strained silicon MOSFET technology (Digest. International Electron Devices Meeting,)
  9. Electronics
  10. Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs (IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.)

Their papers