Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs

By S. Thompson, G. Sun, K. Wu, Ji-Song Lim, Toshikazu Nishida. IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2004

173 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs (2009, background): “Mobility Enhancement of (100) and (110) pMOSFETs It has been theoretically and experimentally proven that <110> uniaxial compression is more beneficial for enhancing hole mobility than are other stresses (28).”
Considerations for Ultimate CMOS Scaling (2012, background): “vertical field (in contrast to tensile biaxial strain where the gains are significantly reduced at a higher vertical field [98], [99], [102], [103]).”
Uniaxial-process-induced strained-Si: extending the CMOS roadmap (2006, background): “For the 〈110〉 channel, the bulk versus MOSFET coefficients are close but do vary up to ∼ 50% for the values extracted in this and other works [18], [38].”
In search of "Forever," continued transistor scaling one new material at a time (2005, background): “and an advantageously small nMOSFET threshold voltage shift [62].”