The High-k Solution

By Robert S. Chau, Tahir Ghani. IEEE spectrum, 2007

329 citations recorded by the source corpus.

How researchers see this paper

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High-K materials and metal gates for CMOS applications (2015, unknown): “The incorporation of high-K dielectrics with metal gates into a manufacturable, high volume transistor process is the result of tremendous ingenuity and effort by many scientists and engineers [1].”
Coherent optical OFDM: has its time come? [Invited] (2008, background): “Given the fact that Intel will soon produce their next-generation Penryn CPUs from their forthcoming 45 nm manufacturing process based on high-k technology [53], the CMOS ASIC chip for CO-OFDM can potentially migrate to the same process in the near future.”
Single-layer MoS2 transistors. (2011, background): “7 eV and the fact that it is commonly used as a gate dielectric both by the research community and major microprocessor manufacturer”
Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs (2008, background): “into semiconductor technology has also allowed much needed reduction in gate leakage and improved the scalability of future devices [3].”