Proposal of a Spin Torque Majority Gate Logic

By Dmitri E. Nikonov, George Bourianoff, Tahir Ghani. IEEE Electron Device Letters, 2010

157 citations recorded by the source corpus.

A spin-based logic device is proposed. It is comprised of a common free ferromagnetic layer and four discrete ferromagnetic nanopillars, each containing an independent fixed layer. It has the functionality of a majority gate and is switched via motion of domain walls by spin transfer torque. Validity of its logic operation and a quantitative performance prediction are demonstrated by micromagnetic simulation. It is entirely compatible with complimentary metal-oxide-semiconductor technology.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b50c243fd9d3405ced76d1194e1662cf5b5eb6fe

Citations in the corpus

• Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking (2013, unknown): “16) [27], [28] is implemented with a ‘‘cross’’ of ferromagnetic wires.”