Strained silicon MOSFET technology
By J. Hoyt, H. Nayfeh, S. Eguchi, I. Åberg, Guangrui Xia, T. Drake, Eugene A. Fitzgerald, D. Antoniadis. Digest. International Electron Devices Meeting,, 2002
252 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/9ed76e141f0d7b805898f7b0180c374bc8bdfcf0
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In Electrical and Electronic Engineering
Citations in the corpus
- A 90-nm logic technology featuring strained-silicon (2004, methodology): “Biaxial strain using Si Ge has received much focus in recent years [18], [23] but has yet to be introduced into a”