Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics

By J. McPherson, R. Khamankar, A. Shanware. 2000

173 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/d56d406817b47f732c83183d83d2c4b01b16d86f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Souvik Mahapatra
2. M. A. Alam
3. J. McPherson
4. P. B. Kumar
5. James H. Stathis
6. Sufi Zafar
7. Haldun Kufluoglu
8. Chris Hyung-Il Kim

In Electronic, Optical and Magnetic Materials

1. J. McPherson

In Materials Chemistry

1. J. McPherson

Citations in the corpus

• A comprehensive model of PMOS NBTI degradation (2005, background): “This weakens the existing Si–H covalent bond [ 24 ], which is easily broken at higher 72 M.A.”
• Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs (2004, background): “Though a number of attempts have been made to model NBTI [18]‐[ 23 ], none has attempted to explain the full experimental dataset within a common framework.”
• Trends in the ultimate breakdown strength of high dielectric-constant materials (2003, methodology): “This very high local electric-field tends to distort and weaken the bond strength of polar molecules such that the bond becomes very susceptible to breakage by standard Boltzmann processes and/or hole capture [ 11 ].”