Luca Vandelli
Electrical and Electronic Engineering · 2010–2015
A researcher in the Science corpus: 5 papers; trusts 1 researcher and is trusted by 1 researcher here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 39 citations into it; #14,073 of 16,539 by trust here, #8,038 by citations
- Polymers and Plastics — 10 citations into it
Whom Luca Vandelli trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Luca Vandelli overall
Papers from Luca Vandelli's perspective
Ordered by how strongly the researchers Luca Vandelli trusts endorse each paper. Same corpus, a different order for every researcher.
- Random Circuit Breaker Network Model for Unipolar Resistance Switching
- Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films (IEEE Electron Device Letters)
- High dielectric constant gate oxides for metal oxide Si transistors
- Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity (International Electron Devices Meeting)
- Metal oxide RRAM switching mechanism based on conductive filament microscopic properties (International Electron Devices Meeting)
- Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth (IEEE Transactions on Electron Devices)
- Metal–Oxide RRAM (Proceedings of the IEEE)
- A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates (2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.)
- Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks
- The effect of interfacial layer properties on the performance of Hf-based gate stack devices
Their papers
- Metal oxide RRAM switching mechanism based on conductive filament microscopic properties (2010) — 134 citations
- Metal oxide resistive memory switching mechanism based on conductive filament properties (2011) — 461 citations
- Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching (2015) — 167 citations
- Grain boundary-driven leakage path formation in HfO2 dielectrics (2011) — 154 citations
- A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks (2011) — 191 citations