Michel Houssa
Materials Chemistry · 2000–2017
A researcher in the Science corpus: 15 papers; trusts 3 researchers and is trusted by 6 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 110 citations into it; #5,805 of 11,513 by trust here, #3,574 by citations
- Atomic and Molecular Physics, and Optics — 67 citations into it; #4,254 of 7,135 by trust here, #2,705 by citations
Whom Michel Houssa trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Andrea C. Ferrari
- Stefan Grimme
- A.K. Geim
- Stefano Baroni
- Paolo Giannozzi
- J. Perdew
- Sébastien Lebègue
- K. Novoselov
- Changgu Lee
Who trusts Michel Houssa overall
Papers from Michel Houssa's perspective
Ordered by how strongly the researchers Michel Houssa trusts endorse each paper. Same corpus, a different order for every researcher.
- Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials (Science)
- Phonons and related crystal properties from density-functional perturbation theory
- Single-layer MoS2 transistors. (Nature Nanotechnology)
- Two- and one-dimensional honeycomb structures of silicon and germanium. (Physical Review Letters)
- QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials (Journal of Physics: Condensed Matter)
- Atomically thin MoS₂: a new direct-gap semiconductor. (Physical Review Letters)
- Generalized Gradient Approximation Made Simple.
- Raman spectroscopy of graphene and graphite: Disorder, electron phonon coupling, doping and nonadiabatic effects
- Emerging photoluminescence in monolayer MoS2. (Nano letters (Print))
- Semiempirical GGA‐type density functional constructed with a long‐range dispersion correction (Journal of Computational Chemistry)
Their papers
- Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 (2011) — 620 citations
- Buckled two-dimensional Xene sheets. (2017) — 703 citations
- Can silicon behave like graphene? A first-principles study (2010) — 219 citations
- Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks (2002) — 169 citations
- Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation (2000) — 185 citations
- Vibrational properties of silicene and germanene (2012) — 161 citations
- Electronic properties of hydrogenated silicene and germanene (2011) — 411 citations
- Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance (2008) — 255 citations
- Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide (2007) — 264 citations
- Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions (2006) — 267 citations
- HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition (2005) — 152 citations
- High-? Gate Dielectrics (2004) — 170 citations
- High k Gate Dielectrics (2003) — 289 citations
- Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2 (2002) — 196 citations
- Trap-assisted tunneling in high permittivity gate dielectric stacks (2000) — 338 citations