A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

By Fanming Zeng, J. An, Guangnan Zhou, Wenmao Li, Hui Wang, T. Duan, Lingli Jiang, Hongyu Yu. Electronics, 2018

142 citations recorded by the source corpus.

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/efcfe854cbc7944d7061e2a7479a500c50ca60d7