A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

By R. Pengelly, Simon Wood, Jim W. Milligan, S. T. Sheppard, W. Pribble. IEEE transactions on microwave theory and techniques, 2012

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The Doherty Power Amplifier: Review of Recent Solutions and Trends (2015, background): “However, the intrinsic properties of GaN devices permit higher frequency operation and larger bandwidth [12] thanks to the reduced capacitive effects.”
A review of GaN HEMT broadband power amplifiers (2020, positive): “The material properties of GaN with wurtzite crystal structure, [13–16] compared to Si, SiC and GaAs are given in Table1.”
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements (2014, background): “2364855 resistance, high switching speed, and high breakdown voltage [3].”
High-Frequency PWM Buck Converters Using GaN-on-SiC HEMTs (2014, background): “In spite of its higher cost, SiC substrates are sometimes preferred over Si to produce high-quality GaN HEMTs [9]: the high thermal conductivity of SiC enables higher power densities and reliable high-power operation.”