Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination

By G. Koley, V. Tilak, L. Eastman, M. Spencer. 2003

231 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/1ac54cbc96f6d7d894f71f163c4d3501b3e4ea76

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

In Electrical and Electronic Engineering

Citations in the corpus

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (2008, background): “Kelvin probe experiments show changes in the surface potential of the gate-drain region, with accumulation of negative charge [ 31 ].”
Comparison of GaN HEMTs on Diamond and SiC Substrates (2007, background): “Although the passivation layers were identical for these devices to ensure an equivalent thermal gradient, the optimal passivation may be different for the different epitaxial layers [ 11 ]; this may account for the difference in negative output resistance observed for the two structures [Fig. 2(a)]”
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs (2008, background): “processing have been addressed, including surface passivation [1]–[4], barrier thickness [6], [7], Al mole fraction in the AlGaN barrier [10], prepassivation plasma treatments [8], insulated”
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs (2004, background): “Indications in favor of surface-induced collapse are: 1) dispersion effects are reduced by SiN surface passivation [7] which decreases the density of deep levels [8], and/or it blocks electrons from getting trapped at the surface [9], or it”
Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film (2012, background): “, ∼20 nm) from the polarized surface, and could easily suffer from surface-state-induced adverse effects such as current collapse [1], [2], particularly at high-drain-”
Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs (2006, background): “Some recent works have, in particular, addressed the reliability implications of surface passivation [ 6 ]‐[10], barrier thickness [11], [12], Al mole fraction in the AlGaN barrier [13], field-plate gate [11], [12], [14], prepassivation plasma treatments [15].”