James M. LeBeau
Materials Chemistry · 2010–2019
A researcher in the Science corpus: 10 papers; trusts 4 researchers and is trusted by 4 researchers here, as inferred from the citation graph.
Subfields
- Materials Chemistry — 129 citations into it; #8,588 of 11,513 by trust here, #6,247 by citations
- Electrical and Electronic Engineering — 125 citations into it; #7,925 of 16,539 by trust here, #4,069 by citations
Whom James M. LeBeau trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- Uwe Schroeder (in Electrical and Electronic Engineering)
- Thomas Mikolajick (in Electrical and Electronic Engineering)
- Tony Schenk (in Electrical and Electronic Engineering)
- E. Grimley (in Electrical and Electronic Engineering)
Who trusts James M. LeBeau
- Thomas Mikolajick (in Electrical and Electronic Engineering)
- Uwe Schroeder (in Electrical and Electronic Engineering)
- Tony Schenk (in Electrical and Electronic Engineering)
- E. Grimley (in Electrical and Electronic Engineering)
Papers from James M. LeBeau's perspective
Ordered by how strongly the researchers James M. LeBeau trusts endorse each paper. Same corpus, a different order for every researcher.
- Ferroelectric solid solutions with morphotropic boundaries: Vanishing polarization anisotropy, adaptive, polar glass, and two-phase states
- Influence of short-range and long-range order on the evolution of the morphotropic phase boundary in Pb Zr[sub 1−x]Ti[sub x] O₃
- Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study
- Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System
- Novel ferroelectric FET based synapse for neuromorphic systems (Symposium on VLSI Technology)
- Ferroelectricity in hafnium oxide thin films
- A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
- Vacancy and interstitial defects in hafnia
- High dielectric constant gate oxides for metal oxide Si transistors
Their papers
- Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors (2016) — 812 citations
- On the structural origins of ferroelectricity in HfO2 thin films (2015) — 575 citations
- Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films (2016) — 387 citations
- Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System (2017) — 161 citations
- A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants (2017) — 221 citations
- Spin-driven ordering of Cr in the equiatomic high entropy alloy NiFeCrCo (2015) — 208 citations
- Giant piezoelectricity of Sm-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals (2019) — 728 citations
- Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2 (2017) — 156 citations
- Transition from Battery to Pseudocapacitor Behavior via Structural Water in Tungsten Oxide (2017) — 207 citations
- Low-dimensional Mott material: transport in ultrathin epitaxial LaNiO3 films (2010) — 166 citations