Low-dimensional Mott material: transport in ultrathin epitaxial LaNiO3 films

By Junwoo Son, P. Moetakef, James M. LeBeau, D. Ouellette, L. Balents, S. Allen, Susanne Stemmer. 2010

166 citations recorded by the source corpus.

Electrical resistivity and magnetotransport are explored for thin (3–30 nm), epitaxial LaNiO3 films. Films were grown on three different substrates to obtain LaNiO3 films that are coherently strained, with different signs and magnitude of film strain. It is shown that d-band transport is inhibited as the layers progress from compression to tension. The Hall coefficient is “holelike.” Increasing tensile strain causes the film resistivity to increase, causing strong localization to appear below a critical thickness.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ec8911512b8d5dba767136515a23ba6a7599210d

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Citations in the corpus

• Physics of Ultrathin Films and Heterostructures of Rare-Earth Nickelates (2016, background): “Following this success, the high quality epitaxy at low oxygen partial pressure has been also realized by PLD [47], sputtering [48] and all-oxide molecular beam epitaxy (MBE) [49].”