Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrates
By Y. Oshima, E. Víllora, K. Shimamura. 2015
150 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment
View Paper: https://www.semanticscholar.org/paper/7cacb3cb4a02bf753541c9804ece9f5d105a407c
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
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Citations in the corpus
- Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications (2020, methodology): “Oshima et al achieved the epitaxial growth of phasepure ε-Ga2O3 for the first time on GaN (0001), AlN (0001), and β-Ga2O3 (−201) substrates by HVPE at 550 ◦C, and the optical bandgap was determined to be 4.9 eV [83].”
- Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, background): “3(e) and (f) provides the SEM images of that α-Ga2O3 layer grown on a sapphire (0001) substrate [73].”
- Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques (2018, background): “HVPE [28] c-plane sapphire Gallium chloride (Ga metal+ HCl), O2, N2 carrier gas 525–650◦C Atmospheric pressure α-Ga2O3”