Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

By E. Ahmadi, Onur S. Koksaldi, Xun Zheng, T. Mates, Y. Oshima, Umesh K. Mishra, J. Speck. 2017

133 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9dbe0752897d4d730008754c0af6b260729b4cc0