Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

By Y. Oshima, Takeshi Eri, M. Shibata, H. Sunakawa, Kenji K. Kobayashi, T. Ichihashi, A. Usui. 2003

229 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/24c4ab6108e023025b1a77376b8b0ad209830664

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. H. Ohta
2. Tohru Nakamura
3. F. Horikiri
4. Yoshinobu Narita
5. Takehiro Yoshida
6. N. Kaneda
7. T. Mishima

Citations in the corpus

• Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV (2015, methodology): “The layer structure shown in the figure was grown by metal-organic vapor phase epitaxy (MOVPE) on a freestanding GaN substrate fabricated by the void-assisted separation method with threading dislocation densities less than 3 × 106 cm−2 [6], [7].”