Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

By Byung Joon Choi, Doo Seok Jeong, Sei‐Yong Kim, C. Rohde, Seongwook Choi, J. Oh, Hyuk-Nyun Kim, C. S. Hwang, K. Szot, Rainer Waser and 2 more. 2005

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The resistive switching mechanism of 20- to 57-nm-thick TiO2 thin films grown by atomic-layer deposition was studied by current-voltage measurements and conductive atomic force microscopy. Electric pulse-induced resistance switching was repetitively (> a few hundred times) observed with a resistance ratio ⪢102. Both the low- and high-resistance states showed linear log current versus log voltage graphs with a slope of 1 in the low-voltage region where switching did not occur. The thermal stability of both conduction states was also studied. Atomic force microscopy studies under atmosphere and high-vacuum conditions showed that resistance switching is closely related to the formation and elimination of conducting spots. The conducting spots of the low-resistance state have a few tens times higher conductivity than those of the high-resistance state and their density is also a few tens times higher which results in a ∼103 times larger overall conductivity. An interesting finding was that the area where the ...

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/d92604e1663f54cc4597130c603f40f34da23752

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Overview of candidate device technologies for storage-class memory (2008, background): “The application of an electric field to ionic TiO2 crystals pulls the oxygen ions away from the crystal toward the top electrode, creating oxygen vacancies that form the conductive path in the ON state [ 58 ].”