Current status of the phase change memory and its future

By Stefan K. Lai. IEEE International Electron Devices Meeting 2003, 2003

395 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/80c26929a86d5c42cd498d2ad28fd984cfa73c68

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Onur Mutlu
3. Hyunjin Lee
4. Sangyeun Cho
5. Jun Yang
6. Andrea Leonardo Lacaita
7. D. Sharma
8. Simone Lavizzari

In Materials Chemistry

1. Onur Mutlu
2. Daniele Ielmini
3. Hyunjin Lee
4. Sangyeun Cho
5. Andrea Leonardo Lacaita
6. D. Sharma
7. Simone Lavizzari
8. Simone Raoux

Citations in the corpus

• Phase change memory technology (2010, methodology): “Reprinted with permission from Reference [40] ( c © 2003 IEEE).”
• Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study (2009, background): “tended scalability, large cycling endurance, and high read/write speed [1].”
• Flip-N-Write: A simple deterministic technique to improve PRAM write performance, energy and endurance (2009, methodology): “Lastly, the scalability of the PRAM technology potentially surpasses that of the DRAM and the NAND flash technologies [9, 20].”
• Architecting phase change memory as a scalable dram alternative (2009, positive): “Phase changes are induced by injecting current into the resistor-chalcogenide junction and heating the chalcogenide to 650 ◦ C. Current and voltage characteristics of the chalco-genide are identical regardless of its initial phase, which lowers programming complexity and latency [14].”
• Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (2009, background): “Such constraints and the ongoing demand for increased memory density have spurred intensive research on possible new nonvolatile memory technologies, including phase-change memory [2], magneto-resistive memory [3], ferroelectric memory (FeRAM), [4] and resistive-switching memory (RRAM) [5]–[7].”
• Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory (2009, background): “ing gate structures, developed into new technologies such as phase-change memory [2], magneto-resistive memory (MRAM) [3], ferro-electric memory (FeRAM) [4] and”
• Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories (2007, background): “THE PHASE-CHANGE memory (PCM) has recently attracted a large interest as an emerging nonvolatile technology [1].”
• Phase-Change Technology and the Future of Main Memory (2010, background): “4" reduction in PCM energy from 80 nm to 40 nm.(7,8) In contrast, the ITRS projects that DRAM energy will fall by only 1.”
• Overview of candidate device technologies for storage-class memory (2008, neutral): “PCRAM has been shown to offer high endurance [52], fast speed [53], inherent scaling of the phase-change process beyond the 22-nm node [54], and integration at technology nodes down to 90 nm [55].”