2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

By Myoung-Jae Lee, Young-soo Park, B. Kang, Seung‐Eon Ahn, Chang Bum Lee, Kihwan Kim, W. Xianyu, G. Stefanovich, Jung-Hyun Lee, Seok-Jae Chung and 4 more. 2007 IEEE International Electron Devices Meeting, 2007

212 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/f1a6b6875ae43f1e45dfbd1d5224817dc15cb7eb

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In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Shimeng Yu
3. Pai-Yu Chen
4. A. L. Lacaita
5. Yuan Xie
6. Tuo-Hung Hou
7. N. Jouppi
8. Chung-Wei Hsu

Citations in the corpus

• An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput (2012, background): “Index Terms—ReRAM, multi-layer, cross-point, resistive memory element, bidirectional diode, short bitline structure, multi-bit write architecture, write dummy cell, error check and correct, write throughput.”
• Resistive Random Access Memory (ReRAM) Based on Metal Oxides (2010, methodology): “The multistack structure of ReRAM has been demonstrated in the 1D1R configuration [ 78 ].”
• A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics (2013, background): “A footprint of 4F2/n may be achieved by stacking up n-layers of crossbar arrays [2] or building crossbar arrays vertically in 3-D structures [3].”
• NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory (2012, background): “Several ReRAM prototypes [7]–[9] have been demonstrated and show promising properties on fast switching speed and low energy consumption.”
• Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications (2011, background): “Compatible with the 4F(2) crossbar array, the stacking one diode–one resistor (1D1R) cell structure appears as one of the most attractive candidates [3], [4], but diodes with sufficiently high forward current density and stable unipolar RS elements are still under”
• Emerging Memory Technologies: Recent Trends and Prospects (2016, methodology): “3D Integration of PCRAM/RRAM There are two monolithic 3D integration approaches for PCRAM and/or RRAM technologies: one is based on stacking the conventional horizontal cross-point array layer by layer [59], as shown in Figure 6(a), which is referred to as 3D X-point as in the Intel/Micron announcem”
• Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (2009, background): “switching mechanism [1]–[3], as well as the device manufacturing simplicity and the feasibility for simple cross-point 3-D memory stacks [4], [5], makes RRAM technology very attractive for next-generation nonvolatile memory applications.”