Electrical observations of filamentary conductions for the resistive memory switching in NiO films

By D. C. Kim, S. Seo, Seung‐Eon Ahn, D. Suh, Myoung-Jae Lee, B. Park, I. Yoo, I. Baek, Hae-Sung Kim, E. Yim and 6 more. 2006

518 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/6442c4ddfd8b3a0502a59174c99f842439c92183

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Andrea Leonardo Lacaita
3. A. L. Lacaita
4. Enrique Miranda
5. Shibing Long
6. U. Russo
7. H. Philip Wong
8. Shimeng Yu

In Polymers and Plastics

1. Daniele Ielmini
2. Andrea Leonardo Lacaita

Citations in the corpus

• Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (2009, methodology): “fact, the most current-demanding operation of the memory cell, particularly for unipolar RRAM where currents in a few mA range are usually reported [5], [8], [12], [14], [15].”
• Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions (2010, background): “Several models have been proposed to this aim, which invoke mechanisms like the formation and rupture of conducting filaments [2], chargetrapping and defect-controlled switching [3], and electron hopping in domains undergoing insulator–metal transitions [4], among others.”