Tsu-Jae King

Electrical and Electronic Engineering · 2000–2005

A researcher in the Science corpus: 16 papers; trusts 1 researcher and is trusted by 5 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 22 citations into it; #5,283 of 16,539 by trust here, #3,480 by citations
• Atomic and Molecular Physics, and Optics — 5 citations into it
• Materials Chemistry — 5 citations into it

Whom Tsu-Jae King trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. John Robertson

Who trusts Tsu-Jae King overall

1. John Robertson
2. C. T. Nguyen
3. Vladimir Gritsenko

Papers from Tsu-Jae King's perspective

Ordered by how strongly the researchers Tsu-Jae King trusts endorse each paper. Same corpus, a different order for every researcher.

1. Gate length scaling and threshold voltage control of double-gate MOSFETs (International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138))
2. VARIOT: a novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices (IEEE Electron Device Letters)
3. Experimental determination of the maximum post-process annealing temperature for standard CMOS wafers
4. AND T
5. Influence of cultivation temperature on the ligninolytic activity of selected fungal strains
6. Γ and B
7. High-κ gate dielectrics: Current status and materials properties considerations
8. Three-dimensional bicontinuous ultrafast-charge and -discharge bulk battery electrodes. (Nature Nanotechnology)
9. Electrochromic Systems and the Prospects for Devices
10. The design and application of multifunctional structure-battery materials systems

Their papers

• Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime (2000) — 232 citations
• FinFET-a self-aligned double-gate MOSFET scalable to 20 nm (2000) — 1,667 citations
• Polycrystalline silicon-germanium films for integrated microsystems (2003) — 166 citations
• Gate length scaling and threshold voltage control of double-gate MOSFETs (2000) — 181 citations
• Observation of bulk HfO2 defects by spectroscopic ellipsometry (2004) — 237 citations
• Direct tunneling leakage current and scalability of alternative gate dielectrics (2002) — 200 citations
• Nanoscale CMOS spacer FinFET for the terabit era (2002) — 141 citations
• A new nano-electro-mechanical field effect transistor (NEMFET) design for low-power electronics (2005) — 136 citations
• Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/ (2001) — 221 citations
• Sub-20 nm CMOS FinFET technologies (2001) — 225 citations
• A spacer patterning technology for nanoscale CMOS (2002) — 218 citations
• Impact of crystal size and tunnel dielectric on semiconductor nanocrystal memory performance (2003) — 143 citations
• Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology (2002) — 417 citations
• FinFET scaling to 10 nm gate length (2002) — 626 citations
• Frequency-independent equivalent circuit model for on-chip spiral inductors (2002) — 420 citations
• Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric (2000) — 187 citations