Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/

By Y. King, Tsu-Jae King, Chenming Calvin Hu. 2001

221 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/08af5e7d8616058afc0e56dc159d0660b64ad18c

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In Electrical and Electronic Engineering

1. Edwin Chihchuan Kan
2. G. Pei

Citations in the corpus

• Nanocrystal nonvolatile memory devices (2002, background): “Fig. 7. Endurance characteristic of the nanocrystal memory devices presented in (a) [19]and (b) [ 20 ].”
• Metal nanocrystal memories. I. Device design and fabrication (2002, methodology): “Memories with discrete charge storage elements allow more aggressive scaling of the tunnel oxide and exhibit superior characteristics compared to Flash memories in terms of operation voltage, write/erase speed, and endurance [2], [ 3 ].”