Direct tunneling leakage current and scalability of alternative gate dielectrics

By Y. Yeo, Tsu-Jae King, Chenming Calvin Hu. 2002

200 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/89c3f5cd548734f8ea2b8a544e2cf6814a20d623

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In Electrical and Electronic Engineering

1. Razali Ismail
2. Ee Wah Lim
3. Fu-Chien Chiu

Citations in the corpus

• Navigation aids in the search for future high-k dielectrics: Physical and electrical trends (2007, background): “For Fowler– Nordheim tunnelling, n = 3/2 while for direct tunnelling it was suggested recently [15] that a semi-empirical expression of the form of Eq.”
• Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey (2015, background): “Note that the current density (JDT) for a given oxide thickness is dependent to the κ value of the dielectric and tunneling barrier height (ΦB) [77].”
• A Review on Conduction Mechanisms in Dielectric Films (2014, background): “gate leakage requirements for future CMOS technology [22].”