Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

417 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Fermi pinning-induced thermal instability of metal-gate work functions (2004, background): “Therefore, the work function of the metal-gate materials on HfO is determined by the intrinsic states or MIGS [2], [3], [14].”