Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime
By Jakub Kedzierski, Peiqi Xuan, E. Anderson, J. Bokor, Tsu-Jae King, Chenming Calvin Hu. International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000
232 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/eb066bb7061ea703bc299fb2c66f6da902e169f2
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In Atomic and Molecular Physics, and Optics
- Mark S. Lundstrom
- Anisur Rahman
- Jing Guo
- Supriyo Datta
- Phaedon Avouris
- Joerg Appenzeller
- Gianluca Fiori
- G. Iannaccone
In Electrical and Electronic Engineering
- Mark S. Lundstrom
- Anisur Rahman
- Jing Guo
- Supriyo Datta
- Avik W. Ghosh
- Dmitri E. Nikonov
- Eric Pop
- G. Iannaccone
Citations in the corpus
- The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance (2005, background): “An alternate sequence would introduce strained-Si channels, followed by new gate stack materials with UTB single-gate MOSFETs introduced sometime after the new gate stack.”
- Fabrication and Characterization of the Charge-Plasma Diode (2010, background): “devices show diode behavior in the “linear” region confirming the Schottky behavior of these contacts to lowly doped n-type Si [15].”
- N-type Schottky barrier source/drain MOSFET using ytterbium silicide (2004, background): “On the other hand, the log versus curve shows two slopes at the subthreshold region for long-channel devices [4], [6].”
- A computational study of thin-body, double-gate, Schottky barrier MOSFETs (2002, methodology): “Bulk SBFETs suffer from large leakage currents through the body under off-state condition [7], but an ultrathin SOI body, 15-nm gate length SBFET recently demonstrated good device operation at nanoscale dimensions (an on-current of 200 A m and an on‐off ratio of 10 [ 3 ]).”
- Theory of ballistic nanotransistors (2003, background): “The Schottky barrier MOSFET (SBFET), which repl ces the heavily doped silicon source drain with a silicide, is one such example [39], [40].”