Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

By A. Pirovano, Andrea Leonardo Lacaita, F. Pellizzer, S. Kostylev, Augusto Benvenuti, R. Bez. IEEE Transactions on Electron Devices, 2004

348 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/a411ef0a9c9fa9812936f9e1c283405900ce3aee

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. H. Philip Wong
3. Simone Raoux
4. Andrea Leonardo Lacaita
5. D. Sharma
6. Simone Lavizzari
7. Geoffrey W. Burr
8. Chung Hon Lam

In Electronic, Optical and Magnetic Materials

1. Daniele Ielmini
2. Simone Raoux

In Materials Chemistry

1. Daniele Ielmini
2. H. Philip Wong
3. Simone Raoux
4. Andrea Leonardo Lacaita
5. D. Sharma
6. Simone Lavizzari
7. Geoffrey W. Burr
8. Chung Hon Lam

Citations in the corpus

• A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators (2019, neutral): “Adapted with permission from Reference [69].”
• Phase-change random access memory: A scalable technology (2008, background): “Vt and RESET resistance recovering slowly over time [10, 11].”
• Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories (2007, background): “From the figure, reset-state resistance drifts according to the power law [12]”
• Phase-Change Memory—Towards a Storage-Class Memory (2017, background): “The amorphous resistance drifts logarithmically with time to a higher value immediately after the reset pulse is removed, following the power law R = R0 × (t/t0) where R and R0 are the present and initial resistances, t and t0 are the present and initial times, and γ is the drift exponent [77].”
• Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study (2009, background): “, spontaneous nucleation and growth of the crystalline phase within the solid amorphous material [5], [6], and structural relaxation (SR) [7]–[9].”
• Phase change memory technology (2010, background): “(The tendency of Germanium (Ge) is not clear — Reference [214] shows it clearly depleting from the repeatedly molten mushroom cap over the heater, while Reference [213] indicates no motion).”