A. L. Lacaita

Electrical and Electronic Engineering · 2003–2009

A researcher in the Science corpus: 5 papers; trusts 1 researcher and is trusted by 1 researcher here, as inferred from the citation graph.

Subfields

Whom A. L. Lacaita trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Daniele Ielmini

Who trusts A. L. Lacaita overall

  1. Daniele Ielmini
  2. Geoffrey W. Burr
  3. Shimeng Yu
  4. Andrea Leonardo Lacaita

Papers from A. L. Lacaita's perspective

Ordered by how strongly the researchers A. L. Lacaita trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Non-volatile resistive switching for advanced memory applications (IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.)
  2. Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V (2007 IEEE International Electron Devices Meeting)
  3. A Low-Power Nonvolatile Switching Element Based on Copper-Tungsten Oxide Solid Electrolyte (IEEE transactions on nanotechnology)
  4. Electrical observations of filamentary conductions for the resistive memory switching in NiO films
  5. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
  6. 2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications (2007 IEEE International Electron Devices Meeting)
  7. Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films
  8. Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
  9. Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (IEEE Transactions on Electron Devices)
  10. Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses (IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.)

Their papers