Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology
By S. Hudgens, B. Johnson. 2004
250 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/cd16b75140f90ff1e936c851e52342648566a025
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In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
- Simone Raoux
- A. Taylor
- Martin Salinga
- Matthew J. Breitwisch
- Houtong Chen
- Geoffrey W. Burr
- N. Yu
- Chung Hon Lam
Citations in the corpus
- Storage-class memory: The next storage system technology (2008, background): “The exceptions are systems that need ultralow-cost storage, such as archival and consumer video applications A PCM-based SCM is expected to have roughly the specifications shown in Table 1 by 2020.”
- Phase-change random access memory: A scalable technology (2008, background): “These newer alloys switch faster because the crystallization process generates very little atomic motion [4], compared to the phase segregation that occurs in the earlier Te-rich alloys [5].”
- Current and Future Challenges in Radiation Effects on CMOS Electronics (2010, background): “Other devices that have received a great deal of recent interest include phase change and magnetic non-volatile memories (PCM and MRAM, respectively) [125], [126].”
- Overview of emerging nonvolatile memory technologies (2014, unknown): “, crystalline and amorphous) [102,103].”
- A review of metasurfaces: physics and applications (2016, background): “CDs, DVDs, and Blu-ray discs, can be switched between the amorphous and crystalline states by laser or electrical current pulses with controlled duration and intensity [254, 255].”