Threshold field of phase change memory materials measured using phase change bridge devices

By D. Krebs, Simone Raoux, C. Rettner, Geoffrey W. Burr, Martin Salinga, Matthias Wuttig. 2009

146 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/63f8f13243ee1b977336f063ccd8d7747173ed06

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Simone Raoux

In Electrical and Electronic Engineering

1. A. Padilla
2. Michele M. Franceschini
3. B. Jackson
4. Bülent N. Kurdi
5. Matthew J. Breitwisch
6. Rohit S. Shenoy
7. Simone Raoux
8. Kailash Gopalakrishnan

In Materials Chemistry

1. A. Padilla
2. Michele M. Franceschini
3. B. Jackson
4. Bülent N. Kurdi
5. Matthew J. Breitwisch
6. Rohit S. Shenoy
7. Simone Raoux
8. Kailash Gopalakrishnan

Citations in the corpus

• Phase change memory technology (2010, methodology): “% Ge, and thin Sb phase change materials[34, 42, 78].”