Overview of candidate device technologies for storage-class memory

By Geoffrey W. Burr, Bülent N. Kurdi, J. Campbell Scott, Chung Hon Lam, Kailash Gopalakrishnan, Rohit S. Shenoy. IBM Journal of Research and Development, 2008

708 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3e1c9cacab4f96184c7f73afef07882ac4cfbb6e

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In Materials Chemistry

Citations in the corpus

Phase change memory technology (2010, background): “Since that time, both FRAM and MRAM have proved to be less scalable than had been hoped[31], although the original MRAM concept has since been mostly replaced by the more promising Spin-Transfer Torque (STT-RAM)[248] and Racetrack memory[249] concepts.”
Artificial Intelligence Meets Flexible Sensors: Emerging Smart Flexible Sensing Systems Driven by Machine Learning and Artificial Synapses (2023, background): “Nowadays, some phase change materials such as 2D materials and metal oxides are used for the construction of 2 T flexible synaptic devices, which demonstrates great potential in neuromorphic [80].”
A review of emerging non-volatile memory (NVM) technologies and applications (2016, background): “Storage class memory (SCM) is introduced to ﬁll this performance gap by reaching access speed close to DRAM and at the same time lowering the bit-cost to the level of HDD [117].”
In-Memory Big Data Management and Processing: A Survey (2015, background): “mance on the same order of magnitude as DRAM, but with persistent writes [202].”
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. (2010, background): “456" language="eng" relation="no" origsrc="yes"> Innovations in modern information technology are critically dependent on the development of denser, faster and less energy-consuming non-volatile memory (NVM”
Overview of emerging nonvolatile memory technologies (2014, background): “NP blends show promising data retention times, switching speed, and cycling endurance, but the on-state current is too low to permit scaling to nanometer dimensions [10,14].”
Storage-class memory: The next storage system technology (2008, methodology): “An overview of these technologies appears as a companion paper [2] in this issue of the IBM Journal of Research and Development.”
Persistent B+-Trees in Non-Volatile Main Memory (2015, background): “As a result, there are widespread interests in the research community and in the industry to consider incorporating NVM technologies to substitute or complement DRAM as the main memory in future computer systems [5, 9, 36, 15, 26, 7, 31, 8, 33, 29, 20].”