Phase-change random access memory: A scalable technology

By Simone Raoux, Geoffrey W. Burr, Matthew J. Breitwisch, C. Rettner, Yi-Chou Chen, R. Shelby, Martin Salinga, D. Krebs, Shih-Hung Chen, H. Lung and 1 more. IBM Journal of Research and Development, 2008

1,014 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/fae8a785260ac5c34be82fca92a4abef4c30d655

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

NOVA: A Log-structured File System for Hybrid Volatile/Non-volatile Main Memories (2016, background): “…technologies Emerging non-volatile memory technologies, such as spin-torque transfer RAM (STT-RAM) [28] [42], phase change memory (PCM) [10] [18] [29] [52], resistive RAM (ReRAM) [22] [62], and 3D XPoint memory technology [1], promise to provide fast, non-volatile, byte-addressable memories .”
RowHammer: A Retrospective (2019, background): “[202], [204], [245], [253], [254], [259], STT-MRAM [61], [137], and RRAM/ReRAM/memristors [246] are likely to exhibit similar and perhaps even more exacerbated reliability”
Storage-class memory: The next storage system technology (2008, background): “The exceptions are systems that need ultralow-cost storage, such as archival and consumer video applications A PCM-based SCM is expected to have roughly the specifications shown in Table 1 by 2020.”
Recent Progress in Phase-Change Memory Technology (2016, background): “The large resistance contrast of PCM provides the multiple analog levels needed for Multiple Level Cell (MLC) operation [1], another path to reducing cost per bit.”
Phase change memory (2011, background): “For example, compared with conventional Ge 2 Sb 2 Te 5 , which has a crystallization Reprinted with permission from reference [5]. speed of hundreds of nanoseconds, GeSb and Sb 2 Te 3 are considered fast materials and have been shown to crystallize in tenths of a nanosecond.”
A durable and energy efficient main memory using phase change memory technology (2009, methodology): “We leveraged a recent work on 32nm PCM study [23] and extracted critical measures from its results.”
Flip-N-Write: A simple deterministic technique to improve PRAM write performance, energy and endurance (2009, methodology): “Reducing the SET operation latency depends heavily on material, circuit, and integration technologies [20] and is beyond the scope of this paper.”
Evaluating STT-RAM as an energy-efficient main memory alternative (2013, background): “Of these, PCRAM promises substantial density benefits (at least 2-4X over DRAM today), and it has been studied extensively to replace or augment DRAM in building a higher capacity and more scalable main memory system [5], [30], [49], [52], [66], [64].”
SCMFS: A file system for Storage Class Memory (2011, background): “Enhancing lifetime and security of PCM-based main memory with start-gap wear leveling.”
Phase-Change Memory Optimization for Green Cloud with Genetic Algorithm (2015, methodology): “A 32-nm device prototype has been demonstrated [18]”
Scalable high performance main memory system using phase-change memory technology (2009, neutral): “The difference in resistance between the two states is typically about ﬁve orders of magnitude [24] and can be used to infer logical states of binary data.”
Consistent and Durable Data Structures for Non-Volatile Byte-Addressable Memory (2011, methodology): “BPFS, a PCM-based file system , also proposes a single-level store.”
Use ECP, not ECC, for hard failures in resistive memories (2010, methodology): “Through the application of diﬀerent programming currents, the phase of the material can be melted and then re-solidiﬁed into either a crystalline or amorphous state, each with a distinct electrical resistance.”