OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications

By Stefan K. Lai, T. Lowrey. International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001

310 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/167f0f0a32c1926182e0344a3b3d9fb64daedb33

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In Atomic and Molecular Physics, and Optics

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Citations in the corpus

Electronic switching in phase-change memories (2004, background): “, the RESET current) and the corresponding transition time [17], [18], thus making the chalcogenide-based phase-change memory (PCM) a potential candidate for nonvolatile memories at the 130 nm technology”
Phase-Change Memory—Towards a Storage-Class Memory (2017, background): “Additionally, the primary issue, reset write energy, scaled with feature size and thus continued to decrease with dimension [16].”
Current status of the phase change memory and its future (2003, background): “The basic phase change memory has been demonstrated by several different research groups ( 5 , 6, 7). There are three areas of focus in current development: 1. Cell physics study, 2. Cell program current reduction and 3. High density array manufacturing development.”
Breaking the Speed Limits of Phase-Change Memory (2012, background): “In that work, the scaling limitation of PCRAM can be divided into three spatial ranges: (1) phasechange material critical-nucleus limitation; (2) cell limitation; and (3) array limitation.”
Phase Change Materials (2009, background): “The most common cell design, the so-called mushroom cell (106), which owes its name to the shape of the programming region, is schematically shown in Figure 10b.”
Phase Change Memory (2008, background): “The endurance of PCRAM (the number of times the phase change material can be switched back and forth between the amorphous and crystalline phases) has been shown to be capable of exceeding 1e12 cycles [6].”
Energy reduction for STT-RAM using early write termination (2009, background): “These results indicate that EWT is an effective and practical scheme to improve the energy ef.ciency of a STT-RAM cache.”
Phase change memory technology (2010, methodology): “Thus PCM was given another opportunity, which it seized by quickly demonstrating better endurance than Flash and nearDRAM switching speeds using those new materials[141], and later CMOS-compatible integration[159], scalability to future technology nodes[42], and the capability for robust Multi-Level”
A durable and energy efficient main memory using phase change memory technology (2009, background): “Moreover, phase change material has excellent scalability within current CMOS fabrication methodology [5, 13, 14, 22, 23], which is a key advantage because DRAM scaling will be clamped by the limitation in cell-bitline capacitance ratio.”
Nanotechnology goals and challenges for electronic applications (2002, background): “As a result, other nonvolatile memory technologies are being actively investigated such as: ferroelectric RAM [45] and [46], magnetic RAM [47] and [48] and ovonic memory which is based on a heat-induced phase change of a chalcogenide alloy [ 49 ].”