Storage-class memory: The next storage system technology

By R. Freitas, Winfried W. Wilcke. IBM Journal of Research and Development, 2008

489 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Computer Networks and Communications, Hardware and Architecture

View Paper: https://www.semanticscholar.org/paper/0b0a8fb95e3331cacfe58f8938c3f7134a4c70e1

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In Atomic and Molecular Physics, and Optics

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Citations in the corpus

Enhancing lifetime and security of PCM-based Main Memory with Start-Gap Wear Leveling (2009, background): “PCM devices are expected to last for about 10(7) − 10(8) writes per cell [1][5].”
Use ECP, not ECC, for hard failures in resistive memories (2010, background): “Today’s DRAM memories use single-error-correction (SEC) Hamming codes.”
Recent Progress in Phase-Change Memory Technology (2016, background): “Storage Class Memory (SCM) [57], [58], which would sit just below DRAM in the memory hierarchy, requires reasonably high endurance (”
Emerging Memory Technologies: Recent Trends and Prospects (2016, background): “It is not economically promising for PCRAM/ RRAM to directly replace the NAND flash for standalone SSD due to a higher cost per bit.”
Scalable high performance main memory system using phase-change memory technology (2009, unknown): “Furthermore, critical computing applications are becoming more data-centric than compute-centric [9].”
Consistent and Durable Data Structures for Non-Volatile Byte-Addressable Memory (2011, background): “In conjunction with DRAM's power inefficiencies [5] [19], these trends can potentially accelerate the adoption of NVBM memories.”
NV-Tree: Reducing Consistency Cost for NVM-based Single Level Systems (2015, methodology): “A new category of memory, NVM, has attracted more and more attention in both academia and industry [21, 55].”
A review of emerging non-volatile memory (NVM) technologies and applications (2016, methodology): “While DRAM is slower than cache, it is several orders of magnitude faster than disk drive [116], as shown in Fig.”
Phase change memory technology (2010, methodology): “M-class SCM would likely not be as fast as main memory DRAM.”
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling (2016, background): “These are ideal properties for storage class memory (SCM) applications, filling the gap between DRAM (high performance, low density) and flash (high density, slow operation) [34].”
Overview of candidate device technologies for storage-class memory (2008, background): “However, in the year 2020 this trend will call for millions of HDDs in large server installations [8].”
Phase-Change Memory—Towards a Storage-Class Memory (2017, background): “D NAND), but as a complementary memory technology, which will have performance and cost tradeoff between that of DRAM and NAND [7].”