Matthew J. Breitwisch

Electrical and Electronic Engineering · 2006–2010

A researcher in the Science corpus: 4 papers; trusts 2 researchers and is trusted by 5 researchers here, as inferred from the citation graph.

Subfields

• Electrical and Electronic Engineering — 41 citations into it; #6,910 of 16,539 by trust here, #3,696 by citations
• Materials Chemistry — 39 citations into it; #4,678 of 11,513 by trust here, #4,212 by citations
• Atomic and Molecular Physics, and Optics — 6 citations into it

Whom Matthew J. Breitwisch trusts overall

Their strongest outbound trust, strongest first, inferred from their citations.

1. Stefan K. Lai
2. Daniele Ielmini
3. Simone Raoux
4. R. Freitas

Who trusts Matthew J. Breitwisch overall

1. C. Idumah
2. Jian Xu
3. Geoffrey W. Burr
4. Steven Swanson
5. Simone Raoux
6. Azman Hassan
7. Wolfram H. P. Pernice

Papers from Matthew J. Breitwisch's perspective

Ordered by how strongly the researchers Matthew J. Breitwisch trusts endorse each paper. Same corpus, a different order for every researcher.

1. Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories (IEEE Transactions on Electron Devices)
2. Scaling analysis of phase-change memory technology (IEEE International Electron Devices Meeting 2003)
3. Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology
4. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials (IEEE Transactions on Electron Devices)
5. Understanding the phase-change mechanism of rewritable optical media (Nature Materials)
6. OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications (International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224))
7. AND T
8. Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation (2007 IEEE International Electron Devices Meeting)
9. Storage-class memory: The next storage system technology (IBM Journal of Research and Development)
10. Current status of the phase change memory and its future (IEEE International Electron Devices Meeting 2003)

Their papers

• Phase-change random access memory: A scalable technology (2008) — 1,014 citations
• Ultra-Thin Phase-Change Bridge Memory Device Using GeSb (2006) — 171 citations
• Phase change memory technology (2010) — 1,007 citations
• Phase Change Memory (2008) — 767 citations