Recent Progress in Phase-Change Memory Technology

By Geoffrey W. Burr, M. BrightSky, Abu Sebastian, Huai-Yu Cheng, Jau-Yi Wu, Sangbum Kim, N. Sosa, N. Papandreou, H. Lung, H. Pozidis and 2 more. IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 2016

336 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/65e1189da9b72b2656a0d2bec8e290e2958b3149

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Abu Sebastian
2. M. Le Gallo
3. Evangelos Eleftheriou
4. H. Philip Wong
5. Daniele Ielmini
6. Shimeng Yu
7. Ximeng Guan
8. Jie Deng

In Materials Chemistry

1. H. Philip Wong
2. Abu Sebastian
3. M. Le Gallo
4. Jie Deng

Citations in the corpus

• Phase-Change Memory—Towards a Storage-Class Memory (2017, background): “Since then, thousands of papers have been published, investigating the OTS effect and PCM for several different applications as a solid-state memory [2], [3].”
• Memory devices and applications for in-memory computing (2020, background): “NaTuRe NaNoTecHNology This non-volatile accumulative behaviour, in spite of its nonlinear and stochastic nature, can be exploited in several applications, such as training deep neural networks, where the conductance values need to be incrementally modified.”