Stefan Slesazeck
Electrical and Electronic Engineering · 2012–2021
A researcher in the Science corpus: 10 papers; trusts 4 researchers and is trusted by 2 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 109 citations into it; #11,692 of 16,539 by trust here, #4,543 by citations
- Materials Chemistry — 101 citations into it
Whom Stefan Slesazeck trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Stefan Slesazeck overall
Papers from Stefan Slesazeck's perspective
Ordered by how strongly the researchers Stefan Slesazeck trusts endorse each paper. Same corpus, a different order for every researcher.
- Novel ferroelectric FET based synapse for neuromorphic systems (Symposium on VLSI Technology)
- A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs (International Electron Devices Meeting)
- Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors (MRS bulletin)
- Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System
- Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes
- Ferroelectric tunnel junctions for information storage and processing (Nature Communications)
- Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2
- Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories (2013 IEEE International Electron Devices Meeting)
- A review of recent MOSFET threshold voltage extraction methods (Microelectronics and reliability)
- Ferroelectricity in hafnium oxide thin films
Their papers
- A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs (2016) — 356 citations
- A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond (2017) — 451 citations
- Novel ferroelectric FET based synapse for neuromorphic systems (2017) — 200 citations
- Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors (2016) — 812 citations
- Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG (2012) — 264 citations
- Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors (2018) — 275 citations
- Next generation ferroelectric materials for semiconductor process integration and their applications (2021) — 372 citations
- 2022 roadmap on neuromorphic computing and engineering (2021) — 589 citations
- The Past, the Present, and the Future of Ferroelectric Memories (2020) — 254 citations
- Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 (2016) — 243 citations