Ferroelectric tunnel junctions for information storage and processing
By Vincent Garcia, Manuel Bibes. Nature Communications, 2014
772 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/a5f2e8e4735eddc2a311973703f09bbc40a9c0a0
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- Uwe Schroeder
- Thomas Mikolajick
- Stefan Slesazeck
- Vincent Garcia
- Manuel Bibes
- Abu Sebastian
- M. Le Gallo
- Wei Dang Lu
In Materials Chemistry
- A. Barthélémy
- Manuel Bibes
- Uwe Schroeder
- Stefan Slesazeck
- Thomas Mikolajick
- Vincent Garcia
- Stephane Fusil
- Wei Dang Lu
Citations in the corpus
- The Past, the Present, and the Future of Ferroelectric Memories (2020, background): “5 illustrates the dominant mechanism in an FTJ using very thin ferroelectric layers to allow direct tunneling [94].”
- Memristive technologies for data storage, computation, encryption, and radio-frequency communication (2022, background): “Memristive devices can also be fabricated by placing a ferroelectric insulator a few nano-meters thick [such as Pb(Zr,Ti)O 3 or BaTiO 3 ] between two electrodes (such as Pt, Co, or La 0.7 Sr 0.3 MnO 3 ) ( 20 ).”
- Learning through ferroelectric domain dynamics in solid-state synapses (2017, positive): “We work with purely electronic mem-ristors based on ferroelectric tunnel junctions (FTJs), in which an ultrathin ferroelectric film is sandwiched between two electrodes 23,24 .”