Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs

By Vishal P. Trivedi, Jerry G. Fossum. IEEE Electron Device Letters, 2005

187 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/abcde9e133816fb2a7a8197967d808e0fbbf229e

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In Electrical and Electronic Engineering

1. Te-Kuang Chiang
2. Bo Yu
3. Yuan Taur
4. Kaushik Roy
5. Jae-Joon Kim

Citations in the corpus

• Scaling of Nanowire Transistors (2008, background): “imation as assumptions in the subthreshold region [10], [29], [30].”
• A Quasi-Two-Dimensional Threshold Voltage Model for Short-Channel Junctionless Double-Gate MOSFETs (2012, background): “Note that, although quantum mechanics effects (QMEs) are not accounted for in this work, it has been revealed that QMEs will increase the channel potential barrier and increase the threshold voltage in comparison to the classical electrostatic effects [18], [19].”