Vishal P. Trivedi
Electrical and Electronic Engineering · 2005
A researcher in the Science corpus: 2 papers; trusts 1 researcher and is trusted by 1 researcher here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 6 citations into it; #14,740 of 16,539 by trust here, #15,621 by citations
Whom Vishal P. Trivedi trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Vishal P. Trivedi overall
Papers from Vishal P. Trivedi's perspective
Ordered by how strongly the researchers Vishal P. Trivedi trusts endorse each paper. Same corpus, a different order for every researcher.
- Double-gate CMOS: symmetrical- versus asymmetrical-gate devices
- Extension and source/drain design for high-performance FinFET devices
- FinFET scaling to 10 nm gate length (Digest. International Electron Devices Meeting,)
- A spacer patterning technology for nanoscale CMOS
- Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation (Digest. International Electron Devices Meeting,)
- Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs (IEEE International Electron Devices Meeting 2003)
- The Design of CMOS Radio-Frequency Integrated Circuits
- A logic nanotechnology featuring strained-silicon (IEEE Electron Device Letters)
- Nanoscale CMOS spacer FinFET for the terabit era
- FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
Their papers
- Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs (2005) — 187 citations
- Nanoscale FinFETs with gate-source/drain underlap (2005) — 265 citations