Comparison of threshold-voltage shifts for uniaxial and biaxial tensile-stressed n-MOSFETs

By Ji-Song Lim, S. Thompson, Jerry G. Fossum. IEEE Electron Device Letters, 2004

206 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/e56698a4d929fd3e205e42df99329af1d441d2de

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Citations in the corpus

• Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing (2006, methodology): “Uniaxial and biaxial are terminologies used to describe the stress state in the transistors [8], [29] depending on the number of nonzero terms in the stress tensor.”