Qiang Chen
Electrical and Electronic Engineering · with Meindl · 2002–2003
A researcher in the Science corpus: 2 papers; trusts 4 researchers and is trusted by 2 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 8 citations into it; #13,896 of 16,539 by trust here, #13,165 by citations
Whom Qiang Chen trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Qiang Chen overall
Papers from Qiang Chen's perspective
Ordered by how strongly the researchers Qiang Chen trusts endorse each paper. Same corpus, a different order for every researcher.
- Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs (IEEE Electron Device Letters)
- Scaling challenges and device design requirements for high performance sub-50 nm gate length planar CMOS transistors (2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104))
- Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
- An analytical solution to a double-gate MOSFET with undoped body
- A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs
- Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs
- Double-gate CMOS: symmetrical- versus asymmetrical-gate devices
- Device scaling limits of Si MOSFETs and their application dependencies (Proceedings of the IEEE)
- On the performance limits for Si MOSFETs: a theoretical study
- Multiple-gate SOI MOSFETs
Their papers
- A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs (2002) — 189 citations
- A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs (2003) — 262 citations