Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs

By L. Ge, Jerry G. Fossum. 2002

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A physical short-channel threshold voltage model for undoped symmetric double-gate MOSFETs (2003, methodology): “As scales into nanometer regime, consideration of quantum mechanical confinement becomes important as eloquently discussed in [ 29 ].”
Physical insights regarding design and performance of independent-gate FinFETs (2005, background): “Evidently, the assumption of a charge sheet [9] is inappropriate, and, further, 2-D effects, or SCE, and effects of the quantum-mechanical confinement (QME) in the Si fin-body [11] could be important.”
Ultimately thin double-gate SOI MOSFETs (2003, methodology): “Impressive compact and analytical models for DG-MOSFETs, which account for quantum, volume-inversion, short-channel, and nonstatic effects have been proposed in [20], [ 21 ].”
Explicit continuous model for long-channel undoped surrounding gate MOSFETs (2005, background): “For films thinner than 10 nm, quantum confinement should be considered; it leads to a reduction of the channel charge density and an increase of the threshold voltage [7].”
Analytical Model of the Threshold Voltage and Subthreshold Swing of Undoped Cylindrical Gate-All-Around-Based MOSFETs (2007, background): “It has been reported that they cause a reduction of the channel charge density and therefore an increase of the threshold voltage [23].”