Ping Zhou
Electrical and Electronic Engineering · International Symposium on Computer Architecture · 2009–2010
A researcher in the Science corpus: 3 papers; trusts 1 researcher and is trusted by 5 researchers here, as inferred from the citation graph.
Subfields
- Electrical and Electronic Engineering — 18 citations into it; #7,971 of 16,539 by trust here, #8,802 by citations
- Materials Chemistry — 12 citations into it; #4,943 of 11,513 by trust here, #8,144 by citations
Whom Ping Zhou trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
- Benjamin C. Lee
- Stefan K. Lai
- Simone Raoux
- Milo M. K. Martin
- Engin Ipek
- Gabriel H. Loh
- Bo Zhao
- Geoffrey W. Burr
- Onur Mutlu
Who trusts Ping Zhou overall
- Onur Mutlu
- Jian Xu
- Sangyeun Cho
- Cong Xu
- Luiz E. Ramos
- Emre Kultursay
- Adrian Sampson
- Steven Swanson
- Hyunjin Lee
- Jun Yang
Papers from Ping Zhou's perspective
Ordered by how strongly the researchers Ping Zhou trusts endorse each paper. Same corpus, a different order for every researcher.
- Scaling analysis of phase-change memory technology (IEEE International Electron Devices Meeting 2003)
- Ultra-Thin Phase-Change Bridge Memory Device Using GeSb (International Electron Devices Meeting)
- Current status of the phase change memory and its future (IEEE International Electron Devices Meeting 2003)
- A durable and energy efficient main memory using phase change memory technology (International Symposium on Computer Architecture)
- Scalable high performance main memory system using phase-change memory technology (International Symposium on Computer Architecture)
- Better I/O through byte-addressable, persistent memory (Symposium on Operating Systems Principles)
- OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications (International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224))
- Hybrid cache architecture with disparate memory technologies (International Symposium on Computer Architecture)
- Phase-change random access memory: A scalable technology (IBM Journal of Research and Development)
- Architecting phase change memory as a scalable dram alternative (International Symposium on Computer Architecture)
Their papers
- A durable and energy efficient main memory using phase change memory technology (2009) — 954 citations
- Energy reduction for STT-RAM using early write termination (2009) — 352 citations
- Phase-Change Technology and the Future of Main Memory (2010) — 427 citations