Ultra-Thin Phase-Change Bridge Memory Device Using GeSb

By Yi-Chou Chen, C. Rettner, S. Raoux, Geoffrey W. Burr, S. H. Chen, R. Shelby, Martin Salinga, W. Risk, Thomas Happ, Gary M. McClelland and 14 more. International Electron Devices Meeting, 2006

171 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/e44d3897706f54d7aca0c4970c795772e23ce167

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Onur Mutlu
2. Matthias Wuttig
3. Simone Raoux
4. Jun Yang
5. Engin Ipek
6. H. Philip Wong
7. A. Padilla
8. Doug Burger

In Materials Chemistry

1. Onur Mutlu
2. Simone Raoux
3. Matthias Wuttig
4. N. Yamada
5. A. Padilla
6. Doug Burger
7. Bo Zhao
8. H. Philip Wong

Citations in the corpus

• Phase Change Materials (2009, background): “Some are derived from the mushroom cell [edge-contact structure (107), μTrench structure (108, 109), ring structure (110–113), pillar structure (114), lance structure (115)], whereas others are in-plane devices such as the bridge (32, 46) and line structures (46).”
• Phase-change materials for rewriteable data storage. (2007, background): “The latter result is important because it ensures that phase-change recording should be feasible even for feature sizes below 20 nm (ref”
• Architecting phase change memory as a scalable dram alternative (2009, unknown): “Ni-trogen doping increases resistivity and lowers programming current while GS offers lower latency phase changes [8, 11].”
• Phase-Change Technology and the Future of Main Memory (2010, background): “Nitrogen doping increases resistivity and lowers programming current, whereas GS offers lowerlatency phase changes.(5,6) (GS contains the first two elements of GST, germanium and antimony, and does not include tellurium.”
• Phase Change Memory (2008, background): “The dominant crystallization mechanism of a phase change material may be either growth dominated, as in GeSb, or nucleation dominated, as in Ge2Sb2Te5 [3].”
• Phase change memory technology (2010, methodology): “% Ge, and thin Sb phase change materials[34, 42, 78].”
• A durable and energy efficient main memory using phase change memory technology (2009, background): “However, there is only ∼5× difference between the SET and RESET resistance, which is considered small compared with 10∼100X difference between the two for better reliability [4,27].”
• Phase-Change Memory—Towards a Storage-Class Memory (2017, background): “This was demonstrated using ultrathin bridge PCM structures (3-nm-thick, 60-nm2 contact area) [27], PCM with carbon nanotube (CNT) electrodes (bottom electrode diameter: ∼2 nm) [28]–[30], and other extremely scaled devices [31].”
• Thermal transport in amorphous materials: a review (2016, background): “Chen et al [32] showed the great potential of phase-change random access memory, and modeled the 3D phase and temperature distribution in a PCM cell, shown in figure 1(c).”