Phase change materials and phase change memory

By Simone Raoux, F. Xiong, Matthias Wuttig, Eric Pop. MRS bulletin, 2014

487 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/37fb6629efab0055ba88f53d209321aa371172e4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. H. Philip Wong
2. An Chen
3. Daniele Ielmini
4. Shimeng Yu
5. Ximeng Guan
6. Jie Deng

In Materials Chemistry

1. H. Philip Wong
2. An Chen
3. Jie Deng

In Polymers and Plastics

1. H. Philip Wong

Citations in the corpus

• A review of emerging non-volatile memory (NVM) technologies and applications (2016, background): “The microscopic mechanisms of phase change in Ge-Sb-Te (GST) alloys have been thoroughly studied, which help to guide material engineering to improve device characteristics [14].”
• Phase-Change Memory—Towards a Storage-Class Memory (2017, background): “This causes the switching region to become Sb-rich, which has lower crystallization temperatures and thus pins the PCM in the low-resistance state, since the Sb-rich region always crystallizes [66], [67], [69].”